An opto-isolator according to claim 1, further comprising two VCSEL bond pads configured to provide electrical current to the VCSEL diode and two photodiode bond pads configured to provide electrical current to the photodiode.ġ3. An opto-isolator according to claim 9, wherein the polymer forms the at least one reflective surface.ġ2. An opto-isolator according to claim 9, wherein the polymer has a substantially similar index of refraction to GaAs.ġ1. An opto-isolator according to claim 8, wherein the trench is filled with a polymer.ġ0. An opto-isolator according to claim 1, further comprising a trench located between the VCSEL diode and the photodiode, the trench being configured to increase electrical isolation between the VCSEL diode and the photodiode.ĩ. An opto-isolator according to claim 6, wherein the semi-conductor material includes GaAs.Ĩ. An opto-isolator according to claim 5, wherein the surface of the opto-isolator into which the at least one reflective surface is etched includes a semi-conductor material.ħ. An opto-isolator according to claim 1, wherein the at least one reflective surface is etched into a surface of the opto-isolator.Ħ. An opto-isolator according to claim 1, wherein the at least one reflective surfaces includes a first reflective surface and a second reflective surface, the first reflective surface disposed along the axis of transmission of the VCSEL at an angle of about 45 degrees to the axis of transmission of the VCSEL, the second reflective surface disposed along the axis of reception of the photodiode and at an angle of about 45 degrees to the axis of reception of the photodiode.ĥ. An opto-isolator according to claim 1, wherein the VCSEL and the photodiode are supported by a common substrate.Ĥ. An opto-isolator according to claim 1, wherein the VCSEL and the photodiode are monolithically produced on the same semiconductor wafer.ģ. An opto-isolator, comprising: a vertical cavity surface emitting laser (VCSEL) diode comprising a first PN junction with a first p layer and a first n layer a photodiode disposed adjacent to the VCSEL such that an axis of transmission of the VCSEL is parallel to an axis of reception of the photodiode and at least one reflective surface configured to optically couple the VCSEL with the photodiode.Ģ. VERTICAL CAVITY SURFACE EMITTING LASER STRUCTUREġ. Processing a memory link with a set of at least two laser pulses Semiconductor laser, method for fabricating thereof, and method for mounting thereof Laser device and wavelength selecting method in laser deviceĭoped stoichiometric lithium niobate and lithium tantalate for self-frequency conversion lasers High average power integrated optical waveguide laserĬONTROL DEVICE, LASER DEVICE, WAVELENGTH CONVERTING METHOD, AND PROGRAM
Method of designing the cavity length of a tunable laser light source
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